These devices are excellent for switching inductive loads, and any application requiring standard gate drive. This series exhibits ultra-low on resistance and gate charge, but also the best reverse recovery characteristics of any device of similar ratings. USCi’s cascode products co-package its UJC series high-performance SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. The device Normally-On characteristics with low R DS(ON) at V GS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. The 1200 V UJN series of high-performance SiC Normally-On JFET transistors exhibits ultra-low on resistance (RDS(ON)) and gate charge (Q G) allowing for low conduction and switching loss.
(USCi) enables dramatic inverter size reduction through higher switching frequency while delivering higher efficiency. With the broadest SiC portfolio in Normally-On JFETS and Normally-Off Cascodes in the industry, united Silicon Carbide Inc.
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